Shipping Delays — We are currently experiencing unusually high order volume, which is affecting order processing. As a result, shipments may be delayed. We are working to get orders out as quickly as possible.
$5.99 flat-rate shipping WORLDWIDE! From 12 thru October 26 — no minimum purchase required. Shop now!
Active
SCT025W120G3-4AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | HiP247-4 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More
|
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $20.02 | 2% |
| 10-99 | $13.00 | 34% |
| 100-500 | $11.50 | 41% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | HiP247-4 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More
|