🌞 July special: FREE shipping of EVAL Tools. No code or minimum required. 🛒 Order now!

📣 Claim FREE shipping offer of LSM6DSV320X. with code DV-LSM6DSV320X-FREESHIP-05. 🛒 Order now!

Active

SCT040W120G3-4

Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHiP247-4

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More

Key features
  • Very fast and robust intrinsic body diode
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very high operating junction temperature capability (TJ = 200 °C)
Out of Stock
Quantity $ per unit Savings
1-9$15.730%
10-99$12.1723%
100-500$10.5333%
Contact sales
$15.73
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHiP247-4

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More

Key features
  • Very fast and robust intrinsic body diode
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very high operating junction temperature capability (TJ = 200 °C)