SCT040W120G3-4

Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	HiP247-4

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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Key features

Key features
Very fast and robust intrinsic body diode Very low R_DS(on) over the entire temperature range High speed switching performances Very high operating junction temperature capability (T_J = 200 °C)

Out of Stock

Quantity	$ per unit	Savings
1-500	$0.00	0%
500 +	Contact sales

$0.00

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	HiP247-4

Description

Key features

Key features
Very fast and robust intrinsic body diode Very low R_DS(on) over the entire temperature range High speed switching performances Very high operating junction temperature capability (T_J = 200 °C)