SCT040W120G3

Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	HIP247

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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Key features

Key features
Very fast and robust intrinsic body diode Very low R_DS(on) over the entire temperature range High speed switching performances Very high operating junction temperature capability (T_J = 200 °C)

Out of Stock

Quantity	$ per unit	Savings
1-500	$0.00	0%
500 +	Contact sales

$0.00

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	HIP247

Description

Key features

Key features
Very fast and robust intrinsic body diode Very low R_DS(on) over the entire temperature range High speed switching performances Very high operating junction temperature capability (T_J = 200 °C)