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SCT040W120G3

Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameHIP247

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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Key features
  • Very fast and robust intrinsic body diode
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very high operating junction temperature capability (TJ = 200 °C)
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ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameHIP247

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More

Key features
  • Very fast and robust intrinsic body diode
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very high operating junction temperature capability (TJ = 200 °C)