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SCT055W65G3-4AG

Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HiP247-4 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHiP247-4

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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Key features
  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Source sensing pin for increased efficiency
Out of Stock
Quantity $ per unit Savings
1-9$12.560%
10-24$11.0712%
25-49$10.7714%
50-99$10.1719%
100-249$9.5824%
250-500$9.2726%
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$12.56
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHiP247-4

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
Read More

Key features
  • AEC-Q101 qualified
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Very fast and robust intrinsic body diode
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Source sensing pin for increased efficiency