🌞 July special: FREE shipping of EVAL Tools. No code or minimum required. 🛒 Order now!
📣 Claim FREE shipping offer of LSM6DSV320X. with code DV-LSM6DSV320X-FREESHIP-05. 🛒 Order now!
NRND
SCT20N120
Silicon carbide Power MOSFET 1200 V, 169 mOhm typ., 20 A in an HiP247 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | HIP247 |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More
|
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $11.21 | 0% |
| 10-99 | $7.23 | 35% |
| 100-500 | $6.24 | 44% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | HIP247 |
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More
|