SCT20N120

Active

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package

Quantity $ per Unit Savings
1 - 9$14.260%
10 - 24$13.118%
25 - 99$12.5612%
100 - 499$11.0722%
500$9.8531%
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In stock
$14.26
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very tight variation of on-resistance vs. temperature
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance