SCT20N120 Active

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
Quantity $ per Unit Savings
1 - 9$12.140%
10 - 24$11.168%
25 - 99$10.6912%
100 - 249$9.2524%
250 - 499$8.9626%
500$8.3831%
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In stock:
$12.14
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very tight variation of on-resistance vs. temperature
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance