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SCT20N120

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameHIP247

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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Key features
  • Very tight variation of on-resistance vs. temperature
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance
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1-10$14.960%
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$14.95
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameHIP247

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More

Key features
  • Very tight variation of on-resistance vs. temperature
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance