SCT20N120AG Active

Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
Quantity $ per Unit Savings
1 - 9$14.410%
10 - 24$13.248%
25 - 99$12.6912%
100 - 249$10.9824%
250 - 499$10.6326%
500$9.9531%
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In stock:
$14.41
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameHIP247
Key features
  • AEC-Q101 qualified
  • Very tight variation of on-resistance vs. temperature
  • Very high operating temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance