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    SCTH35N65G2V-7

    Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an H2PAK-7 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameH2PAK-7
    Description

    This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
    Read More

    Key features
    Key features
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitance
    • Source sensing pin for increased efficiency
    Out of Stock
    Quantity $ per unit Savings
    1-9$15.840%
    10$13.9612%
    10 + Contact sales
    $15.84
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameH2PAK-7
    Description

    This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
    Read More

    Key features
    Key features
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitance
    • Source sensing pin for increased efficiency