SCTW35N65G2V

SCTW35N65G2V

VL53L1CXV0FY/1

VL53L1CXV0FY/1

SCTH35N65G2V-7 Active
Free

Silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameH2PAK-7
Key Features
  • Very fast and robust intrinsic body diode
  • Low capacitance

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

In stock:
$10.90
or
Range Unit Price Savings
1 - 9$10.910%
10 - 24$10.028%
25 - 99$9.6012%
100 - 249$8.5122%
250 - 499$8.2524%
500$7.1235%
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