SCTH35N65G2V-7AG Active

Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack1
GradeAutomotive
Package NameH2PAK-7
Key Features
  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode
  • Low capacitance

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Out of stock
$12.03
Range Unit Price Savings
1 - 9$12.030%
10 - 24$11.068%
25 - 99$10.6012%
100 - 249$9.1724%
250 - 499$8.8826%
500$8.3131%
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