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SCTHS250N65G2G

Automotive-grade silicon carbide Power MOSFET 650 V, 8 mOhm typ., 250 A in a STPAK package

ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantEcopack2
GradeAutomotive
Package NameSTPAK

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
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Key features
  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Source sensing pin for increased efficiency
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ECCN USEAR99
ECCN EUNEC
Packing TypeTray
RoHs compliantEcopack2
GradeAutomotive
Package NameSTPAK

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
Read More

Key features
  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Source sensing pin for increased efficiency