SCTHS250N65G3AG

Automotive-grade silicon carbide Power MOSFET 650 V, 6.7 mOhm typ., 237 A in a STPAK package

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	STPAK

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve...
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Key features

Key features
AEC-Q101 qualified Very low R_DS(on) over the entire temperature range High speed switching performances Very fast and robust intrinsic body diode Very high operating junction temperature capability (T_J = 200 °C) Source sensing pin for increased efficiency

Out of Stock

Quantity	$ per unit	Savings
1-500	$0.00	0%
500 +	Contact sales

$0.00

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tray
RoHs compliant	Ecopack2
Grade	Automotive
Package Name	STPAK

Description

Key features

Key features
AEC-Q101 qualified Very low R_DS(on) over the entire temperature range High speed switching performances Very fast and robust intrinsic body diode Very high operating junction temperature capability (T_J = 200 °C) Source sensing pin for increased efficiency