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SCTL35N65G2V

Active

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package

Quantity $ per Unit Savings
1 - 9$21.640%
10 - 24$19.898%
25 - 99$19.0612%
100 - 499$16.8022%
500$14.9931%
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Out of stock
$21.64
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NamePowerFLAT 8x8 HV

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features
  • Very fast and robust intrinsic body diode
  • Low capacitances
  • Source sensing pin for increased efficiency