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    SCTW100N65G2AG

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    Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
    Learn More about SCTW100N65G2AG

    Quantity $ per Unit Savings
    1 - 9$30.270%
    10 - 24$27.938%
    25 - 99$26.6712%
    100 - 499$23.8421%
    500$23.6822%
    500 + Contact Sales
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    In stock
    $30.27
    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    ROHS Compliance GradeEcopack2
    GradeAutomotive
    Package NameHIP247
    Key features
    • AEC-Q101 qualified
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitance
    • Very high operating junction temperature capability (TJ = 200 °C)
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