SCTW100N65G2AG

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Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package

Quantity $ per Unit Savings
1 - 9$30.270%
10 - 24$27.938%
25 - 99$26.6712%
100 - 499$23.8421%
500$23.6822%
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In stock
$30.27
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameHIP247
Key features
  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)