SCTW100N65G2AG Active

Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeAutomotive
Package NameHIP247
Key Features
  • AEC-Q101 qualified
  • Very high operating temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Low capacitance

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.

Out of stock
$25.81
Range Unit Price Savings
1 - 9$25.810%
10 - 24$23.818%
25 - 99$22.7412%
100 - 249$20.0622%
250 - 499$18.7327%
500$17.1234%
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