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SCTW100N65G2AG
Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 100 A in an HiP247 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | HIP247 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
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In stock
| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $22.08 | 0% |
| 10-24 | $22.07 | 0% |
| 25-249 | $22.05 | 0% |
| 250-500 | $21.55 | 2% |
| 500 + | Contact sales | |
$22.08
$22.08
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Automotive |
| Package Name | HIP247 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
Read More
|