SCTW100N65G2AG Active
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| ROHS Compliance Grade | Ecopack2 |
| Grade | Automotive |
| Package Name | HIP247 |
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This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.
Out of stock
$25.81
| Range | Unit Price | Savings |
|---|---|---|
| 1 - 9 | $25.81 | 0% |
| 10 - 24 | $23.81 | 8% |
| 25 - 99 | $22.74 | 12% |
| 100 - 249 | $20.06 | 22% |
| 250 - 499 | $18.73 | 27% |
| 500 | $17.12 | 34% |
| 500 + | Contact Sales | |