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    SCTW100N65G2AG Active

    Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
    Learn More about SCTW100N65G2AG
    Quantity $ per Unit Savings
    1 - 9$25.810%
    10 - 24$23.818%
    25 - 99$22.7412%
    100 - 249$20.0622%
    250 - 499$18.7327%
    500$17.1234%
    500 + Contact Sales
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    $25.81
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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    ROHS Compliance GradeEcopack2
    GradeAutomotive
    Package NameHIP247
    Key features
    • AEC-Q101 qualified
    • Very high operating temperature capability (TJ = 200 °C)
    • Very fast and robust intrinsic body diode
    • Low capacitance
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