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SCTW60N120G2AG

Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHIP247

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
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Key features
  • AEC-Q101 qualified
  • High speed switching performance
  • Very fast and robust intrinsic body diode
  • Low capacitances
  • Very high operating junction temperature capability (TJ = 200 °C)
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ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeAutomotive
Package NameHIP247

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC...
Read More

Key features
  • AEC-Q101 qualified
  • High speed switching performance
  • Very fast and robust intrinsic body diode
  • Low capacitances
  • Very high operating junction temperature capability (TJ = 200 °C)