SCTW90N65G2V

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Silicon carbide Power MOSFET 650 V, 119 A, 18 mOhm (typ., TJ = 25 C) in an HiP247 package

Quantity $ per Unit Savings
1 - 9$32.640%
10 - 24$30.118%
25 - 99$28.7512%
100 - 500$25.7021%
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Out of stock
$32.64
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHIP247
Key features
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitances