SCTWA35N65G2V-4

Name: SCTWA35N65G2V-4
Brand: STMicroelectronics
SKU: SCTWA35N65G2V-4
Price: 20.54 USD
Availability: OutOfStock

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Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
Learn More about SCTWA35N65G2V-4

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Parameter

Parameter Name	Parameter Value
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	HiP247-4

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2^nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features

Key features
Very fast and robust intrinsic body diode Low capacitances Source sensing pin for increased efficiency Very high operating junction temperature capability (T_J = 200 °C)

SCTWA35N65G2V-4

Active

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package Learn More about SCTWA35N65G2V-4

Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 45 A in an HiP247-4 package
Learn More about SCTWA35N65G2V-4