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SCTWA40N120G2V-4

Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameHiP247-4

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
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Key features
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Source sensing pin for increased efficiency
Out of Stock
Quantity $ per unit Savings
1-9$20.770%
10-24$18.3112%
25-49$17.8114%
50-99$16.8219%
100-249$15.8324%
250-500$15.3426%
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$20.77
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameHiP247-4

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
Read More

Key features
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Source sensing pin for increased efficiency