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SCTWA40N120G2V-4
Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | HiP247-4 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $17.58 | 0% |
| 10-24 | $14.42 | 18% |
| 25-49 | $14.02 | 20% |
| 50-99 | $13.24 | 25% |
| 100-249 | $12.47 | 29% |
| 250-500 | $12.07 | 31% |
| 500 + | Contact sales | |
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tube |
| RoHs compliant | Ecopack2 |
| Grade | Industrial |
| Package Name | HiP247-4 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
Read More
|