SCTWA40N120G2V-4

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Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package

Quantity $ per Unit Savings
1 - 9$19.010%
10 - 24$17.488%
25 - 99$16.7612%
100 - 499$14.7622%
500$13.1331%
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$19.01
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHiP247-4
Key features
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Source sensing pin for increased efficiency