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    SCTWA60N120G2-4

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    Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package
    Learn More about SCTWA60N120G2-4

    Quantity $ per Unit Savings
    1 - 9$26.100%
    10 - 24$24.078%
    25 - 99$23.679%
    100 - 500$21.7917%
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    $26.10
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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    ROHS Compliance GradeEcopack2
    GradeIndustrial
    Package NameHiP247-4
    Key features
    • Very fast and robust intrinsic body diode
    • Extremely low gate charge and input capacitance
    • Very high operating junction temperature capability (TJ = 200 °C)
    • Source sensing pin for increased efficiency
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