SCTWA60N120G2-4

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Silicon carbide Power MOSFET 1200 V, 35 mOhm typ., 60 A in an HiP247-4 package

Quantity $ per Unit Savings
1 - 9$26.100%
10 - 24$24.078%
25 - 99$23.679%
100 - 500$21.7917%
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Out of stock
$26.10
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHiP247-4
Key features
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Source sensing pin for increased efficiency