SCTWA70N120G2V-4

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Silicon carbide Power MOSFET 1200 V, 21 mOhm typ., 91 A in an HiP247 package

Quantity $ per Unit Savings
1 - 9$39.160%
10 - 24$36.547%
25 - 99$35.0211%
100 - 500$31.8319%
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$39.16
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHiP247-4
Key features
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitance
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Source sensing pin for increased efficiency