SCTWA90N65G2V-4

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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

Quantity $ per Unit Savings
1 - 9$30.480%
10 - 24$28.118%
25 - 99$26.8412%
100 - 499$24.0021%
500$22.9225%
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In stock
$30.48
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHiP247-4
Key features
  • High speed switching performance
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitances
  • Source sensing pin for increased efficiency