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SCTWA90N65G2V-4

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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package

Quantity $ per Unit Savings
1 - 9$37.600%
10 - 24$34.688%
25 - 99$33.1212%
100 - 500$29.6221%
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In stock
$37.60
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameHiP247-4

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features
  • High speed switching performance
  • Very high operating junction temperature capability (TJ = 200 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitances
  • Source sensing pin for increased efficiency