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Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | HiP247-4 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
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Quantity | $ per unit | Savings |
---|---|---|
1-9 | $30.19 | 0% |
10-99 | $26.83 | 11% |
100-249 | $23.47 | 22% |
250-500 | $21.90 | 27% |
500 + |
Contact sales |
ECCN US | EAR99 |
ECCN EU | NEC |
Packing Type | Tube |
RoHs compliant | Ecopack2 |
Grade | Industrial |
Package Name | HiP247-4 |
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of...
Read More
|