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STB100N10F7

Active

N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in D2PAK package

Quantity $ per Unit Savings
1 - 9$2.680%
10 - 99$2.3911%
100 - 499$1.9228%
500$1.5841%
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Out of stock
$2.68
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • Among the lowest RDS(on) on the market
  • Excellent FoM (figure of merit)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness