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STB100N6F7

Active

N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package

Quantity $ per Unit Savings
1 - 9$1.960%
10 - 24$1.779%
25 - 99$1.6814%
100$1.4228%
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Out of stock
$1.96
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • Among the lowest RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness