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    STB120N4F6

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    N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package
    Learn More about STB120N4F6

    Quantity $ per Unit Savings
    1 - 9$2.530%
    10 - 24$2.2810%
    25 - 99$2.1615%
    100 - 499$1.8427%
    500$1.5140%
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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    ROHS Compliance GradeEcopack1
    GradeAutomotive
    Package NameD2PAK

    These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.

    Key features
    • Designed for automotive applications and AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss