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STB120N4F6

Active

N-channel 40 V, 3.5 mOhm typ., 80 A STripFET F6 Power MOSFET in D2PAK package

Quantity $ per Unit Savings
1 - 9$2.530%
10 - 24$2.2810%
25 - 99$2.1615%
100 - 499$1.8427%
500$1.5140%
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Out of stock
$2.53
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack1
GradeAutomotive
Package NameD2PAK

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.

Key features
  • Designed for automotive applications and AEC-Q101 qualified
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss