STB80N4F6AG

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Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package

Quantity $ per Unit Savings
1 - 9$1.980%
10 - 24$1.7810%
25 - 99$1.6915%
100 - 499$1.4328%
500$1.1841%
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In stock
$1.98
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeAutomotive
Package NameD2PAK

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key features
  • Designed for automotive applications and AEC-Q101 qualified
  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss