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    STB80N4F6AG

    Automotive-grade N-channel 40 V, 5.5 mOhm typ., 80 A, STripFET F6 Power MOSFET in a D2PAK package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1
    GradeAutomotive
    Package NameD2PAK
    Description

    This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key features
    Key features
    • Designed for automotive applications and AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss
    In stock
    Quantity $ per unit Savings
    1-9$1.910%
    10-99$1.7210%
    100-499$1.3828%
    500$1.1440%
    500 + Contact sales
    $1.91
    $1.91
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1
    GradeAutomotive
    Package NameD2PAK
    Description

    This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

    Key features
    Key features
    • Designed for automotive applications and AEC-Q101 qualified
    • Very low on-resistance
    • Very low gate charge
    • High avalanche ruggedness
    • Low gate drive power loss