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STFH12N105K5

N-channel 1050 V, 0.90 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP wide creepage package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220FP wide creepage

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Industry's lowest RDS(on) * area
  • Industry's best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected
  • Wide creepage distance of 4.25 mm between the pins
Out of Stock
Quantity $ per unit Savings
1-9$3.810%
10-24$3.2116%
25-99$3.0221%
100-249$2.5932%
250-499$2.4536%
500$2.2740%
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$3.81
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220FP wide creepage

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key features
  • Industry's lowest RDS(on) * area
  • Industry's best figure of merit (FoM)
  • Ultra low gate charge
  • 100% avalanche tested
  • Zener-protected
  • Wide creepage distance of 4.25 mm between the pins