STG30M65F2D7

Trench gate field-stop 650 V, 30 A low-loss M series IGBT die in D7 packing

Parameters

Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	N/A
Grade	Industrial
Package Name	D.SCRIB.100% VI STAT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore,...
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Key features

Key features
6 µs of minimum short-circuit withstand time V_CE(sat) = 1.55 V (typ.) @ I_C = 30 A Positive V_CE(sat) temperature coefficient Tight parameter distribution Maximum junction temperature: T_J = 175 °C

Out of Stock

Quantity	$ per unit	Savings
1-500	$0.00	0%
500 +	Contact sales

$0.00

Parameters

Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	N/A
Grade	Industrial
Package Name	D.SCRIB.100% VI STAT

Description

Key features

Key features
6 µs of minimum short-circuit withstand time V_CE(sat) = 1.55 V (typ.) @ I_C = 30 A Positive V_CE(sat) temperature coefficient Tight parameter distribution Maximum junction temperature: T_J = 175 °C