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    STG30M65F2D7

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    Trench gate field-stop 650 V, 30 A low-loss M series IGBT die in D7 packing
    Learn More about STG30M65F2D7

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    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantN/A
    GradeIndustrial
    Package NameD.SCRIB.100% VI STAT

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    Key features
    • 6 µs of minimum short-circuit withstand time
    • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
    • Positive VCE(sat) temperature coefficient
    • Tight parameter distribution
    • Maximum junction temperature: TJ = 175 °C