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STG30M65F2D7

Trench gate field-stop 650 V, 30 A low-loss M series IGBT die in D7 packing

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore,...
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Key features
  • 6 µs of minimum short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C
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Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore,...
Read More

Key features
  • 6 µs of minimum short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 30 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C