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STG50M120F3D7

Trench gate field-stop 1200 V, 50 A low-loss M series IGBT die in D7 packing

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
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Key features
  • Maximum junction temperature: TJ = 175 °C
  • 10 μs of short-circuit withstand time
  • Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A
  • Tight parameter distribution
  • Positive VCE(sat) temperature coefficient
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Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
Read More

Key features
  • Maximum junction temperature: TJ = 175 °C
  • 10 μs of short-circuit withstand time
  • Low VCE(sat) = 1.7 V (typ.) @ IC = 50 A
  • Tight parameter distribution
  • Positive VCE(sat) temperature coefficient