STG50M170F3D7

Trench gate field-stop 1700 V, 50 A low loss M series IGBT die in D7 packing

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	N/A
Grade	Industrial
Package Name	D.SCRIB.100% VI STAT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
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Key features

Key features
Low V_CE(sat) = 2 V (typ.) @ I_C = 50 A 10 μs of short-circuit withstand time Minimized tail current Tight parameter distribution Positive V_CE(sat) temperature coefficient

Out of Stock

Quantity	$ per unit	Savings
1-500	$0.00	0%
500 +	Contact sales

$0.00

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	N/A
Grade	Industrial
Package Name	D.SCRIB.100% VI STAT

Description

Key features

Key features
Low V_CE(sat) = 2 V (typ.) @ I_C = 50 A 10 μs of short-circuit withstand time Minimized tail current Tight parameter distribution Positive V_CE(sat) temperature coefficient