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    STG50M170F3D7

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    Trench gate field-stop 1700 V, 50 A low loss M series IGBT die in D7 packing
    Learn More about STG50M170F3D7

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    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeNot Applicable
    RoHs compliantN/A
    GradeIndustrial
    Package NameD.SCRIB.100% VI STAT

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

    Key features
    • Low VCE(sat) = 2 V (typ.) @ IC = 50 A
    • 10 μs of short-circuit withstand time
    • Minimized tail current
    • Tight parameter distribution
    • Positive VCE(sat) temperature coefficient