📢 Promotion ends on Mar. 31st! Get FREE SHIPPING for your automotive project! Order now! 🛒



Trench gate field-stop 1700 V, 50 A low loss M series IGBT die in D7 packing

Quantity $ per Unit Savings
1 - 500$0.000%
Contact Sales
Out of stock
Parameter NameParameter Value
Packing TypeNot Applicable
RoHs compliantN/A
Package NameD.SCRIB.100% VI STAT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Key features
  • Low VCE(sat) = 2 V (typ.) @ IC = 50 A
  • 10 μs of short-circuit withstand time
  • Minimized tail current
  • Tight parameter distribution
  • Positive VCE(sat) temperature coefficient