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STG50M170F3D7
Trench gate field-stop 1700 V, 50 A low loss M series IGBT die in D7 packing
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Not Applicable |
| RoHs compliant | N/A |
| Grade | Industrial |
| Package Name | D.SCRIB.100% VI STAT |
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
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|
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Not Applicable |
| RoHs compliant | N/A |
| Grade | Industrial |
| Package Name | D.SCRIB.100% VI STAT |
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
Read More
|