STG50M65F2D7

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650 V, 50 A trench gate field-stop M series low-loss IGBT die in D7 packing

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Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
ROHS Compliance GradeN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT
Key features
  • 6 µs of short-circuit withstand time
  • Low VCE(sat) = 1.65 V (typ.) @ IC = 50 A
  • Positive VCE(sat) temperature coefficient
  • Tight parameter distribution
  • Maximum junction temperature: TJ = 175 °C