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STG60H65FBD7

Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing

ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the...
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Key features
  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A
  • Safe paralleling
  • Tight parameter distribution
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ECCN USEAR99
ECCN EUNEC
Packing TypeNot Applicable
RoHs compliantN/A
GradeIndustrial
Package NameD.SCRIB.100% VI STAT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the...
Read More

Key features
  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Very low saturation voltage: VCE(sat) = 1.65 V (typ) @ IC = 60 A
  • Safe paralleling
  • Tight parameter distribution