STG60H65FBD7

Trench gate field-stop 650 V, 60 A high-speed HB series IGBT die in D7 packing

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	N/A
Grade	Industrial
Package Name	D.SCRIB.100% VI STAT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the...
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Key features

Key features
Maximum junction temperature: T_J = 175 °C High speed switching series Minimized tail current Very low saturation voltage: V_CE(sat) = 1.65 V (typ) @ I_C = 60 A Safe paralleling Tight parameter distribution

Out of Stock

Quantity	$ per unit	Savings
1-500	$0.00	0%
500 +	Contact sales

$0.00

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Not Applicable
RoHs compliant	N/A
Grade	Industrial
Package Name	D.SCRIB.100% VI STAT

Description

Key features

Key features
Maximum junction temperature: T_J = 175 °C High speed switching series Minimized tail current Very low saturation voltage: V_CE(sat) = 1.65 V (typ) @ I_C = 60 A Safe paralleling Tight parameter distribution