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STGB10M65DF2

Name: STGB10M65DF2
Brand: STMicroelectronics
SKU: STGB10M65DF2
Price: 2.22 USD
Availability: OutOfStock

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Trench gate field-stop IGBT M series, 650 V 10 A low loss
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Quantity	$ per Unit	Savings
1 - 9	$2.22	0%
10 - 24	$2.00	10%
25 - 99	$1.94	13%
100 - 499	$1.61	28%
500	$1.32	40%
500 +	Contact Sales

Out of stock

$2.22

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Parameter

Parameter Name	Parameter Value
Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	D2PAK

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V_CE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key features

Key features
6 µs of short-circuit withstand time V_CE(sat) = 1.55 V (typ.) @ I_C = 10 A Tight parameter distribution Safer paralleling Positive V_CE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: T_J = 175 °C

STGB10M65DF2

Active

Trench gate field-stop IGBT M series, 650 V 10 A low loss Learn More about STGB10M65DF2

Trench gate field-stop IGBT M series, 650 V 10 A low loss
Learn More about STGB10M65DF2