STGB15M65DF2

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Trench gate field-stop IGBT M series, 650 V 15 A low loss

Quantity $ per Unit Savings
1 - 9$2.220%
10 - 24$2.0010%
25 - 99$1.8915%
100$1.6128%
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Out of stock
$2.22
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key features
  • 6 μs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 15 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
  • Maximum junction temperature: TJ = 175 °C