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STGB20H65FB2

Active

Trench gate field-stop 650 V, 20 A high speed HB2 series IGBT in a D2PAK package

Quantity $ per Unit Savings
1 - 9$1.780%
10 - 24$1.6110%
25 - 99$1.5115%
100 - 499$1.2927%
500$1.0641%
Contact Sales
Out of stock
$1.78
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameD2PAK

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Key features
  • Maximum junction temperature : TJ = 175 °C
  • Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient