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STGB30H65DFB2

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Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package
Learn More about STGB30H65DFB2

Quantity	$ per Unit	Savings
1 - 9	$2.64	0%
10 - 24	$2.37	10%
25	$2.23	15%
25 +	Contact Sales

In stock

$2.64

Parameter

Parameter Name	Parameter Value
Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	D2PAK

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better V_CE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Key features

Key features
Maximum junction temperature : T_J = 175 °C Low V_CE(sat) = 1.65 V (typ.) @ I_C = 30 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive V_CE(sat) temperature coefficient

STGB30H65DFB2

Active

Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package Learn More about STGB30H65DFB2

Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a D2PAK package
Learn More about STGB30H65DFB2