Currency
USD
  • Language
    English
    • Toggle Nav
    Cart 0
    Search
    Advanced Search
    Menu
    Account
    Settings
  • Language
    English
    • Currency
    USD

    📢 New offer this month! Get FREE SHIPPING for your automotive project! Order now! 🛒

    main product photo

    STGB4M65DF2

    Active

    Trench gate field-stop IGBT, M series 650 V, 4 A low loss
    Learn More about STGB4M65DF2

    Quantity $ per Unit Savings
    1 - 9$1.200%
    10 - 24$1.0811%
    25 - 99$1.0315%
    100 - 499$0.8431%
    500$0.6943%
    500 + Contact Sales
    Save to My List Compare
    Out of stock
    $1.21
    Notify me
    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameD2PAK

    This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

    Key features
    • 6 µs of short-circuit withstand time
    • VCE(sat) = 1.6 V (typ.) @ IC = 4 A
    • Tight parameter distribution
    • Safer paralleling
    • Low thermal resistance
    • Soft and very fast recovery antiparallel diode