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STGB50H65FB2

Active

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package

Quantity $ per Unit Savings
1 - 9$2.900%
10 - 24$2.5911%
25 - 99$2.2821%
100 - 249$1.9732%
250 - 499$1.8536%
500$1.6045%
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Out of stock
$2.90
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Key features
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient