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    STGB50H65FB2

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    Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package
    Learn More about STGB50H65FB2

    Quantity $ per Unit Savings
    1 - 9$2.900%
    10 - 24$2.5911%
    25 - 99$2.2821%
    100 - 249$1.9732%
    250 - 499$1.8536%
    500$1.6045%
    500 + Contact Sales
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    Out of stock
    $2.90
    Parameter NameParameter Value
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameD2PAK

    The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

    Key features
    • Maximum junction temperature: TJ = 175 °C
    • Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient