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STGB50H65FB2

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy....
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Key features
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient
In stock
Quantity $ per unit Savings
1-9$2.050%
10-99$1.7117%
100-249$1.3534%
250-499$1.2539%
500$1.1445%
Contact sales
$2.05
$2.05
or
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy....
Read More

Key features
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient