STGB50H65FB2

Active

Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a D2PAK package

Quantity $ per Unit Savings
1 - 9$2.600%
10 - 24$2.3310%
25 - 99$2.2015%
100 - 499$1.8828%
500$1.5540%
Contact Sales
Out of stock
$2.60
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameD2PAK

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Key features
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.55 V(typ.) @ IC = 50 A
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient