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STGD19N40LZ

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Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ

Quantity $ per Unit Savings
1 - 9$2.470%
10 - 24$2.2210%
25 - 99$2.1015%
100 - 499$1.7828%
500$1.4740%
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$2.47
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeAutomotive
Package NameDPAK

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gate-emitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition systems.

Key features
  • AEC-Q101 qualified
  • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
  • ESD gate-emitter protection
  • Gate-collector high voltage clamping
  • Logic level gate drive
  • Low saturation voltage
  • High pulsed current capability
  • Gate and gate-emitter resistor