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STGD4M65DF2

Active

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

Quantity $ per Unit Savings
1 - 9$1.200%
10 - 24$1.0910%
25 - 99$1.0414%
100 - 230$0.8530%
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Out of stock
$1.21
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Key features
  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.6 V (typ.) @ IC = 4 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode