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STGD4M65DF2

Active

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

Quantity $ per Unit Savings
1 - 9$1.200%
10 - 24$1.0910%
25 - 99$1.0414%
100 - 499$0.8530%
500$0.7042%
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Out of stock
$1.21
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameDPAK

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Key features
  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.6 V (typ.) @ IC = 4 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode