📢 Limited time offer – Buy One Get One Free on Intelligent Power Switch boards. Use code DV-IPS-BOGO-12 at checkout! Order now

Flash sale: FREE Page EEPROM products until Dec. 19th. Use code DV-EEPROM-FREE-11 at checkout! Shop Now

🎄 Celebrate early X’mas with us: $5.99 flat rate shipping on all orders! Promotion ends on Dec. 19th. Shop Now 🎄

Active

STGD4M65DF2

Trench gate field-stop IGBT, M series 650 V, 4 A low loss

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
Read More

Key features
  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.6 V (typ.) @ IC = 4 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
In stock
Quantity $ per unit Savings
1-9$1.080%
10-99$0.8918%
100-230$0.6341%
Contact sales
$1.08
$1.08
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
Read More

Key features
  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.6 V (typ.) @ IC = 4 A
  • Tight parameter distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode