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STGD6M65DF2

Trench gate field-stop IGBT, M series 650 V, 6 A low loss

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

This device is an IGBT developed using an advanced proprietary trench gate field‑stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
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Key features
  • Maximum junction temperature: TJ = 175 °C
  • 6 μs of minimum short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) at IC = 6 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast-recovery antiparallel diode
In stock
Quantity $ per unit Savings
1-9$1.630%
10-99$0.9741%
100-499$0.6859%
500$0.5566%
Contact sales
$1.63
$1.63
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack2
GradeIndustrial
Package NameDPAK

This device is an IGBT developed using an advanced proprietary trench gate field‑stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
Read More

Key features
  • Maximum junction temperature: TJ = 175 °C
  • 6 μs of minimum short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) at IC = 6 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast-recovery antiparallel diode