STGD6M65DF2

Trench gate field-stop IGBT, M series 650 V, 6 A low loss

Parameters

Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	DPAK

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
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Key features

Key features
Maximum junction temperature: T_J = 175 °C 6 μs of minimum short-circuit withstand time V_CE(sat) = 1.55 V (typ.) @ I_C = 6 A Tight parameter distribution Safer paralleling Positive V_CE(sat) temperature coefficient Low thermal resistance Soft and very fast-recovery antiparallel diode

In stock

Quantity	$ per unit	Savings
1-9	$1.25	0%
10-99	$1.03	18%
100-499	$0.81	35%
500	$0.68	45%
500 +	Contact sales

$1.25

Parameters

Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tape And Reel
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	DPAK

Description

Key features

Key features
Maximum junction temperature: T_J = 175 °C 6 μs of minimum short-circuit withstand time V_CE(sat) = 1.55 V (typ.) @ I_C = 6 A Tight parameter distribution Safer paralleling Positive V_CE(sat) temperature coefficient Low thermal resistance Soft and very fast-recovery antiparallel diode