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STGF30H65DFB2

Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220FP package

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220FP

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy....
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Key features
  • Maximum junction temperature : TJ = 175 °C
  • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
  • Very fast and soft recovery co-packaged diode
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient
Out of Stock
Quantity $ per unit Savings
1-9$2.400%
10-99$1.8722%
100-249$1.5336%
250-499$1.4340%
500$1.4042%
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$2.40
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-220FP

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy....
Read More

Key features
  • Maximum junction temperature : TJ = 175 °C
  • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
  • Very fast and soft recovery co-packaged diode
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient