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    STGF30H65DFB2

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    Trench gate field-stop 650 V, 30 A high speed HB2 series IGBT in a TO-220FP package
    Learn More about STGF30H65DFB2

    Quantity $ per Unit Savings
    1 - 9$2.150%
    10 - 24$1.997%
    25 - 99$1.9111%
    100 - 499$1.7021%
    500$1.5428%
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    Parameter NameParameter Value
    Operating Temp Min Celsius-55.0
    Operating Temp Max Celsius175.0
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameTO-220FP

    The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

    Key features
    • Maximum junction temperature : TJ = 175 °C
    • Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
    • Very fast and soft recovery co-packaged diode
    • Minimized tail current
    • Tight parameter distribution
    • Low thermal resistance
    • Positive VCE(sat) temperature coefficient