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    STGIPQ3H60T-HZS

    SLLIMM nano 2nd series IPM, 3-phase inverter, 3 A, 600 V, IGBT

    Parameters
    Target Application3-phase Induction Motor (ACIM)
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameN2DIP-26L
    Description

    This second series of SLLIMM (small low-loss intelligent molded module) nano provides a compact, high-performance AC motor drive in a simple, rugged design. It is composed of six improved short-circuit rugged trench gate fieldstop IGBTs with freewheeling diodes and three half-bridge HVICs for gate...
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    Key features
    Key features
    • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate driving and freewheeling diodes
    • 3.3 V, 5 V, 15 V TTL/CMOS input comparators with hysteresis and pull-down/pull-up resistors
    • Internal bootstrap diode
    • Optimized for low electromagnetic interference
    • Undervoltage lockout
    • VCE(SAT) negative temperature coefficient
    • Shutdown function
    • Interlocking function
    • Op-amp for advanced current sensing
    • Comparator for fault protection against overcurrent
    • NTC (UL 1434 CA 2 and 4)
    • Up to ±2 kV ESD protection (HBM C = 100 pF, R = 1.5 kΩ)
    • Isolation ratings of 1800 Vrms/min.
    • UL recognition: UL 1557, file E81734
    In stock
    Quantity $ per unit Savings
    1-9$8.430%
    10-24$7.2214%
    25-99$6.5522%
    100-249$6.0229%
    250-359$5.6633%
    360-500$5.3137%
    500 + Contact sales
    $8.43
    $8.43
    Parameters
    Target Application3-phase Induction Motor (ACIM)
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTube
    RoHs compliantEcopack2
    GradeIndustrial
    Package NameN2DIP-26L
    Description

    This second series of SLLIMM (small low-loss intelligent molded module) nano provides a compact, high-performance AC motor drive in a simple, rugged design. It is composed of six improved short-circuit rugged trench gate fieldstop IGBTs with freewheeling diodes and three half-bridge HVICs for gate...
    Read More

    Key features
    Key features
    • IPM 3 A, 600 V, 3-phase IGBT inverter bridge including 3 control ICs for gate driving and freewheeling diodes
    • 3.3 V, 5 V, 15 V TTL/CMOS input comparators with hysteresis and pull-down/pull-up resistors
    • Internal bootstrap diode
    • Optimized for low electromagnetic interference
    • Undervoltage lockout
    • VCE(SAT) negative temperature coefficient
    • Shutdown function
    • Interlocking function
    • Op-amp for advanced current sensing
    • Comparator for fault protection against overcurrent
    • NTC (UL 1434 CA 2 and 4)
    • Up to ±2 kV ESD protection (HBM C = 100 pF, R = 1.5 kΩ)
    • Isolation ratings of 1800 Vrms/min.
    • UL recognition: UL 1557, file E81734
    Associated products