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STGW25H120F2

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Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Quantity $ per Unit Savings
1 - 9$7.620%
10 - 20$6.899%
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$7.61
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameTO-247

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key features
  • Maximum junction temperature: TJ= 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat)= 2.1 V (typ.) @ IC= 25 A
  • 5 μs minimum short circuit withstand time at TJ=150 °C
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance