STGW25H120F2

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Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Learn More about STGW25H120F2

Quantity	$ per Unit	Savings
1 - 9	$7.62	0%
10 - 20	$6.89	9%
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Parameter

Parameter Name	Parameter Value
Operating Temp Min Celsius	-55.0
Operating Temp Max Celsius	175.0
ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
ROHS Compliance Grade	Ecopack2
Grade	Industrial
Package Name	TO-247

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive V_CE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key features

Key features
Maximum junction temperature: T_J= 175 °C High speed switching series Minimized tail current V_CE(sat)= 2.1 V (typ.) @ I_C= 25 A 5 μs minimum short circuit withstand time at T_J=150 °C Tight parameters distribution Safe paralleling Low thermal resistance

STGW25H120F2

Active

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Learn More about STGW25H120F2

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Learn More about STGW25H120F2