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STGW40H120DF2

Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters....
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Key features
  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 2.1 V (typ.) @ IC = 40 A
  • 5 μs minimum short circuit withstand time at TJ=150 °C
  • Safe paralleling
  • Very fast recovery antiparallel diode
  • Low thermal resistance
Out of Stock
Quantity $ per unit Savings
1-9$10.550%
10-24$9.0414%
25-99$7.3730%
100-249$6.9534%
250-500$6.5438%
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$10.54
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters....
Read More

Key features
  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 2.1 V (typ.) @ IC = 40 A
  • 5 μs minimum short circuit withstand time at TJ=150 °C
  • Safe paralleling
  • Very fast recovery antiparallel diode
  • Low thermal resistance