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STGW75H65DFB2-4

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO247-4

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy....
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Key features
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
  • Very fast and soft recovery co-packaged diode
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient
  • Excellent switching performance thanks to the extra driving kelvin pin
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ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO247-4

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy....
Read More

Key features
  • Maximum junction temperature: TJ = 175 °C
  • Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
  • Very fast and soft recovery co-packaged diode
  • Minimized tail current
  • Tight parameter distribution
  • Low thermal resistance
  • Positive VCE(sat) temperature coefficient
  • Excellent switching performance thanks to the extra driving kelvin pin