STGW75H65DFB2-4

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO247-4 package

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO247-4

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy....
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Key features

Key features
Maximum junction temperature: T_J = 175 °C Low V_CE(sat) = 1.55 V(typ.) @ I_C = 75 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive V_CE(sat) temperature coefficient Excellent switching performance thanks to the extra driving kelvin pin

In stock

Quantity	$ per unit	Savings
1-10	$6.05	0%
10 +	Contact sales

$6.05

Parameters

ECCN US	EAR99
ECCN EU	NEC
Packing Type	Tube
RoHs compliant	Ecopack2
Grade	Industrial
Package Name	TO247-4

Description

Key features

Key features
Maximum junction temperature: T_J = 175 °C Low V_CE(sat) = 1.55 V(typ.) @ I_C = 75 A Very fast and soft recovery co-packaged diode Minimized tail current Tight parameter distribution Low thermal resistance Positive V_CE(sat) temperature coefficient Excellent switching performance thanks to the extra driving kelvin pin