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STGWA25M120DF3

Trench gate field-stop IGBT, M series 1200 V, 25 A low loss

Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247 long leads

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
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Key features
  • Maximum junction temperature: TJ = 175 °C
  • 10 μs of short-circuit withstand time
  • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
  • Tight parameter distribution
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft- and fast-recovery antiparallel diode
In stock
Quantity $ per unit Savings
1-9$5.450%
10-24$4.979%
25-99$4.3221%
100-249$3.7032%
250-500$3.2940%
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$5.45
$5.45
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247 long leads

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential....
Read More

Key features
  • Maximum junction temperature: TJ = 175 °C
  • 10 μs of short-circuit withstand time
  • Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A
  • Tight parameter distribution
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft- and fast-recovery antiparallel diode