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STGWA80H65DFB

Trench gate field-stop 650 V, 80 A high speed HB series IGBT

ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247 long leads

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the...
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Key features
  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
  • Tight parameter distribution
  • Safe paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode
In stock
Quantity $ per unit Savings
1-500$5.960%
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$5.96
$5.96
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameTO-247 long leads

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the...
Read More

Key features
  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
  • Tight parameter distribution
  • Safe paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Very fast soft recovery antiparallel diode