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STGYA120M65DF2

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Trench gate field-stop IGBT, M series 650 V, 120 A low loss

Quantity $ per Unit Savings
1 - 9$15.160%
10 - 24$13.948%
25 - 99$13.3612%
100 - 500$11.7722%
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$15.16
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
RoHs compliantEcopack2
GradeIndustrial
Package NameMax247 long leads

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Key features
  • Maximum junction temperature: TJ = 175 °C
  • 6 μs of minimum short-circuit withstand time
  • VCE(sat) = 1.65 V (typ.) @ IC = 120 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft- and fast-recovery antiparallel diode