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STGYA120M65DF2

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Trench gate field-stop IGBT, M series 650 V, 120 A low loss

Quantity $ per Unit Savings
1 - 9$15.360%
10 - 24$14.128%
25 - 99$13.5312%
100 - 500$11.9322%
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Out of stock
$15.36
Parameter NameParameter Value
Operating Temp Min Celsius-55.0
Operating Temp Max Celsius175.0
ECCN USEAR99
ECCN EUNEC
Packing TypeTube
ROHS Compliance GradeEcopack2
GradeIndustrial
Package NameMax247 long leads

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Key features
  • 6 µs of short-circuit withstand time
  • VCE(sat) = 1.65 V (typ.) @ IC = 120 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Soft and very fast recovery antiparallel diode
  • Maximum junction temperature: TJ = 175 °C