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STH150N10F7-2

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N-channel 100 V, 3,4mOhm typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 package

Quantity $ per Unit Savings
1 - 9$3.920%
10 - 24$3.5310%
25 - 60$3.3415%
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Out of stock
$3.92
Parameter NameParameter Value
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeIndustrial
Package NameH2PAK-2

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • Among the lowest RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Ciss ratio for EMI immunity
  • High avalanche ruggedness