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NRND

STH160N4LF6-2

N-channel 40 V, 2.7 mOhm typ., 160 A STripFET F6 Power MOSFET in H2PAK-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeIndustrial
Package NameH2PAK-2

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Key features
  • RDS(on)* Qgindustry benchmark
  • Extremely low on-resistance RDS(on)
  • Logic level drive
  • High avalanche ruggedness
  • 100% avalanche tested
In stock
Quantity $ per unit Savings
1-500$1.560%
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$1.56
$1.56
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeIndustrial
Package NameH2PAK-2

This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Key features
  • RDS(on)* Qgindustry benchmark
  • Extremely low on-resistance RDS(on)
  • Logic level drive
  • High avalanche ruggedness
  • 100% avalanche tested