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    NRND

    STH160N4LF6-2

    N-channel 40 V, 2.7 mOhm typ., 160 A STripFET F6 Power MOSFET in H2PAK-2 package

    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameH2PAK-2
    Description

    This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

    Key features
    Key features
    • RDS(on)* Qgindustry benchmark
    • Extremely low on-resistance RDS(on)
    • Logic level drive
    • High avalanche ruggedness
    • 100% avalanche tested
    In stock
    Quantity $ per unit Savings
    1-500$1.560%
    500 + Contact sales
    $1.56
    $1.56
    Parameters
    ECCN USEAR99
    ECCN EUNEC
    Packing TypeTape And Reel
    RoHs compliantEcopack1
    GradeIndustrial
    Package NameH2PAK-2
    Description

    This device is an N-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

    Key features
    Key features
    • RDS(on)* Qgindustry benchmark
    • Extremely low on-resistance RDS(on)
    • Logic level drive
    • High avalanche ruggedness
    • 100% avalanche tested