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N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 (*) |
| Grade | Industrial |
| Package Name | H2PAK-2 |
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $2.65 | 0% |
| 10-99 | $1.81 | 32% |
| 100-499 | $1.54 | 42% |
| 500 | $1.48 | 44% |
| 500 + |
Contact sales |
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| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack1 (*) |
| Grade | Industrial |
| Package Name | H2PAK-2 |
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
|