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STH170N8F7-2

N-channel 80 V, 0.0028 Ohm typ., 120 A STripFET F7 Power MOSFET in a H2PAK-2 package

ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeIndustrial
Package NameH2PAK-2

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • Among the lowest RDS(on)on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Cissratio for EMI immunity
  • High avalanche ruggedness
In stock
Quantity $ per unit Savings
1-500$3.540%
Contact sales
$3.54
$3.54
ECCN USEAR99
ECCN EUNEC
Packing TypeTape And Reel
RoHs compliantEcopack1
GradeIndustrial
Package NameH2PAK-2

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key features
  • Among the lowest RDS(on)on the market
  • Excellent figure of merit (FoM)
  • Low Crss/Cissratio for EMI immunity
  • High avalanche ruggedness