Active
N-channel 80 V, 1.7 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-6 package
| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 (**) |
| Grade | Industrial |
| Package Name | H2PAK-6 |
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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| Quantity | $ per unit | Savings |
|---|---|---|
| 1-9 | $4.71 | 0% |
| 10-99 | $3.50 | 26% |
| 100-499 | $2.51 | 47% |
| 500 | $2.37 | 50% |
| 500 + |
Contact sales |
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| ECCN US | EAR99 |
| ECCN EU | NEC |
| Packing Type | Tape And Reel |
| RoHs compliant | Ecopack2 (**) |
| Grade | Industrial |
| Package Name | H2PAK-6 |
These N-channel Power MOSFETs utilize STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
|